𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Interface characterization of high-k dielectrics on Ge substrates

✍ Scribed by D. Misra; R. Garg; P. Srinivasan; N. Rahim; N.A. Chowdhury


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
568 KB
Volume
9
Category
Article
ISSN
1369-8001

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Magnetic resonance spectroscopy of defec
✍ M. Fanciulli; A. Molle; S. Baldovino; A. Vellei πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 779 KB

High mobility substrates and silicon nanowires are important key elements in the development of advanced devices targeting a vast range of functionalities. In almost all applications the interface between the semiconductor and the oxide layer placed on top or all around plays a crucial role in deter

X-ray interface characterization of Ge Ξ΄
✍ D. Bahr; J. Falta; G. Materlik; B.H. MΓΌller; M. Horn-von Hoegen πŸ“‚ Article πŸ“… 1996 πŸ› Elsevier Science 🌐 English βš– 387 KB

Detailed characterization of extremely thin buried Ge films of monolayer thickness (6 layers) was performed by combination of grazing incidence X-ray reflectivity, crystal truncation rods, and X-ray standing waves. Grazing incidence reflectivity and crystal truncation rods are used to determine the