Interface characterization of high-k dielectrics on Ge substrates
β Scribed by D. Misra; R. Garg; P. Srinivasan; N. Rahim; N.A. Chowdhury
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 568 KB
- Volume
- 9
- Category
- Article
- ISSN
- 1369-8001
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High mobility substrates and silicon nanowires are important key elements in the development of advanced devices targeting a vast range of functionalities. In almost all applications the interface between the semiconductor and the oxide layer placed on top or all around plays a crucial role in deter
Detailed characterization of extremely thin buried Ge films of monolayer thickness (6 layers) was performed by combination of grazing incidence X-ray reflectivity, crystal truncation rods, and X-ray standing waves. Grazing incidence reflectivity and crystal truncation rods are used to determine the