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Gate oxide leakage current analysis and reduction for VLSI circuits

โœ Scribed by Dongwoo Lee; Blaauw, D.; Sylvester, D.

Book ID
118069942
Publisher
IEEE
Year
2004
Tongue
English
Weight
538 KB
Volume
12
Category
Article
ISSN
1063-8210

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Stress Induced Leakage Currents (SILC) are studied in 5 nm-thick oxides on both capacitors and N-MOSFETs after homogeneous FOWLER-NORDHEIM injections under high field stress (>9MV/cm) for both polarities and localized Hot-Carrier injections. Standard I(V) and high-frequency C(V) curves are used to m