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Gate current model for the hot-electron regime of operation in heterostructure field effect transistors

โœ Scribed by Martinez, E.J.; Shur, M.S.; Schuermeyer, F.L.


Book ID
114537447
Publisher
IEEE
Year
1998
Tongue
English
Weight
213 KB
Volume
45
Category
Article
ISSN
0018-9383

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