Process conditions have been investigated for electron beam lithography in the resolution regime of 150urn and below, using chemically amplified resist AZPNll4. Response surface method was used to reveal the influence and interrelationship between different thermal process parameters, based on 27 ex
Fullerite C60 as electron-beam resist for ‘dry’ nanolithography
✍ Scribed by V.V Shnitov; V.M Mikoushkin; Yu.S Gordeev
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 176 KB
- Volume
- 69
- Category
- Article
- ISSN
- 0167-9317
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✦ Synopsis
The fullerite C modification induced by electron irradiation was studied using electron energy loss spectroscopy (EELS).
60
We show that prolonged electron irradiation causes gradual transformation of electron and atomic structures of fullerite C 60 films towards respective structures of amorphous carbon. Moreover, strongly modified parts of fullerite C films become 60 thermally unevaporable. A possible mechanism of these effects is suggested. Finally, we propose a new original nanolithography technique based on two key ideas: the use of fullerite films as negative electron-beam resist and development of lithographic images by appropriate thermal treatment of these films.
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