Optimized process for electron beam nanolithography using AZPN114 chemically amplified resist

✍ Scribed by Z. Cui; R.A. Moody; I.M. Loader; J.G. Watson; P.D. Prewett

• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 276 KB
• Volume: 35
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(96)00175-x

✦ Synopsis

Process conditions have been investigated for electron beam lithography in the resolution regime of 150urn and below, using chemically amplified resist AZPNll4. Response surface method was used to reveal the influence and interrelationship between different thermal process parameters, based on 27 exposure experiments. Line features from 150nm down to 50nm have been obtained using commercial e-beam systems, with less exposure dose used and better line edge acuity than the results reported previously.