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Chemically amplified AZPN114 electron beam resist for advanced photomask fabrication

โœ Scribed by S.E. Huq; P.D. Prewett; P. Herman


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
555 KB
Volume
26
Category
Article
ISSN
0167-9317

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Process conditions have been investigated for electron beam lithography in the resolution regime of 150urn and below, using chemically amplified resist AZPNll4. Response surface method was used to reveal the influence and interrelationship between different thermal process parameters, based on 27 ex