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Formation of vacancy-impurity complexes in highly As- and P-doped Si

✍ Scribed by V. Ranki; K. Saarinen

Book ID: 111713560
Publisher: Elsevier Science
Year: 2003
Tongue: English
Weight: 190 KB
Volume: 340-342
Category: Article
ISSN: 0921-4526
DOI: 10.1016/j.physb.2003.09.117

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