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Vacancy–group-V-impurity atom pairs in Ge crystals doped with P, As, Sb, and Bi

✍ Scribed by Markevich, V. P.; Hawkins, I. D.; Peaker, A. R.; Emtsev, K. V.; Emtsev, V. V.; Litvinov, V. V.; Murin, L. I.; Dobaczewski, L.


Book ID
125842127
Publisher
The American Physical Society
Year
2004
Tongue
English
Weight
94 KB
Volume
70
Category
Article
ISSN
1098-0121

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The emission of the high-momentum annihilation radiation from the subvalent ion core shells and electron density around a positron localized at a vacancy-group-V-impurity atom complexes produced in oxygen-lean Ge doped with P, As, Sb, and Bi by irradiation with 60 Co gamma-rays at room temperature h