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Doping and impurity-vacancy complex formation during vapour-phase epitaxy of gallium arsenide

✍ Scribed by I.A. Bobrovnikova; L.G. Lavrent'eva; M.P. Rusaikin; M.D. Vilisova

Publisher: Elsevier Science
Year: 1992
Tongue: English
Weight: 703 KB
Volume: 123
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(92)90614-o

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