✦ LIBER ✦
Attempts of Homo p–n Junction Formation in ZnS by Impurity Co-Doping with Vapor Phase Epitaxy
✍ Scribed by S. Kishimoto; A. Kato; A. Naito; Y. Sakamoto; S. Iida
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 63 KB
- Volume
- 229
- Category
- Article
- ISSN
- 0370-1972
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✦ Synopsis
ZnS p-n homo junctions have been obtained for the first time with epitaxially grown layers having the structures of n-ZnS : In/p-ZnS : In, Ag, N/p-GaAs and p-ZnS : In, Ag, N/n-ZnS : In/n-GaAs. Both of these structures showed rectifying behavior which is expected for p-n junctions. The forward voltage of 3.7 V where current increases rapidly corresponds to the band gap energy of ZnS at room temperature. For reverse bias, some samples having p-ZnS : In, Ag, N/n-ZnS : In/n-GaAs structure showed backward diode type character.