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Vacancy-impurity complexes and diffusion of Ga and Sn in intrinsic and p-doped germanium

✍ Scribed by Riihimäki, I.; Virtanen, A.; Rinta-Anttila, S.; Pusa, P.; Räisänen, J.; ISOLDE Collaboration, The


Book ID
125841965
Publisher
American Institute of Physics
Year
2007
Tongue
English
Weight
343 KB
Volume
91
Category
Article
ISSN
0003-6951

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The production and annealing of oxygen and carbon related defects in electron-irradiated Ge-doped Czochralski silicon have been studied by means of IR spectroscopy. The results demonstrate that the role of Ge changes with increasing Ge content. At low Ge concentrations, much less than 10 20 cm À3 ,