Electrophysical properties of gallium arsenide in combination with impurity-doped germanium and isovalent indium and antimony impurities

✍ Scribed by M. A. Krivov; E. V. Malisova; M. P. Nikiforova; A. N. Starikov; S. S. Khludkov; Yu. A. Grigor'ev; O. L. Egorova; V. B. Osvenskii

• Book ID: 112428906
• Publisher: Springer
• Year: 1987
• Tongue: English
• Weight: 428 KB
• Volume: 30
• Category: Article
• ISSN: 1573-9228
• DOI: 10.1007/bf00897466