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Investigation of the electrophysical properties and structures of impurity-defective complexes in silicon doped with palladium

✍ Scribed by Sh. Makhkamov; N. A. Tursunov; M. Karimov; S. Zainabidinov; A. R. Sattiev; M. N. Erdonov; Kh. M. Kholmedov

No coin nor oath required. For personal study only.

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