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Structure and properties of amorphous silicon doped with isovalent impurities

โœ Scribed by Pavlov, D. A. ;Khokhlov, A. F. ;Kudryavtseva, R. V. ;Ershov, A. V.


Publisher
John Wiley and Sons
Year
1989
Tongue
English
Weight
372 KB
Volume
116
Category
Article
ISSN
0031-8965

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## Abstract The complex band structures, the imaginary parts of the dielectric constant, and the densities of states of electrons in amorphous Ge and Si are calculated using a generalized pseudopotential formalism based on the Green's function techniques. The short range order is assumed to be the