A two-step annealing process for Ni silicide formation in an ultra-thin body (UTB) RF SOI MOSFET is proposed to prevent a dramatic increase of the gate leakage current from the in-diffusion of Ni into the channel. The first step of the annealing process was performed at a low temperature for di-nick
β¦ LIBER β¦
Formation of ultra-thin PtSi layers with a 2-step silicidation process
β Scribed by R.A. Donaton; S. Jin; H. Bender; M. Zagrebnov; K. Baert; K. Maex; A. Vantomme; G. Langouche
- Book ID
- 114155712
- Publisher
- Elsevier Science
- Year
- 1997
- Tongue
- English
- Weight
- 449 KB
- Volume
- 37-38
- Category
- Article
- ISSN
- 0167-9317
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