Dependence of ultra-thin SiO2 layers formation by ultra-slow single and multicharged ions on process conditions
✍ Scribed by G Borsoni; V Le Roux; R Laffitte; S Kerdilès; N Béchu; L Vallier; M.L Korwin-Pawlowski; C Vannuffel; F Bertin; C Vergnaud; A Chabli; C Wyon
- Publisher
- Elsevier Science
- Year
- 2001
- Tongue
- English
- Weight
- 314 KB
- Volume
- 59
- Category
- Article
- ISSN
- 0167-9317
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✦ Synopsis
Ultra-slow single and multicharged ions (USMCIs) can be used for surface preparation at room temperature, to engineer the top atomic layers of surfaces without modifying the substrate below, in processes such as ultra-thin films growth, etching, deposition, or nanostructures fabrication. The energy for the reaction is brought to the surface through the USMCI potential energy, which can be controlled by varying the ions charges. The USMCI kinetic energy is so small that they do not 26 penetrate below the surface. We have used various USMCIs under low pressures of O (up to 5 ? 10 Torr) to grow 2 ultra-thin films of SiO on Si wafers, up to 1.5 nm with a resolution of 0.1 nm and a uniformity of 60.1 nm. To optimize 2 this process, we have analyzed the surfaces by Fourier transform infrared spectroscopy, auger electron spectroscopy, spectroscopic ellipsometry and transmission electron microscopy.