A two-step annealing process for Ni silicide formation in an ultra-thin body RF SOI MOSFET
✍ Scribed by Chang-Geun Ahn; Tae-Youb Kim; Jong-Heon Yang; In-Bok Baek; Won-ju Cho; Seongjae Lee
- Book ID
- 103843803
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 575 KB
- Volume
- 147
- Category
- Article
- ISSN
- 0921-5107
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✦ Synopsis
A two-step annealing process for Ni silicide formation in an ultra-thin body (UTB) RF SOI MOSFET is proposed to prevent a dramatic increase of the gate leakage current from the in-diffusion of Ni into the channel. The first step of the annealing process was performed at a low temperature for di-nickel silicide (Ni 2 Si) formation, resulting in no in-diffusion of Ni into the channel. Next, the second step of the annealing process was performed at 500 • C for the formation of mono-nickel silicide (NiSi). Finally, the optimized Ni silicide SD with low resistance (5 / ) and a low leakage current was achieved on the UTB. Using the proposed two-step silicide process, UTB RF MOSFET with a gate length of 50 nm a 20-nm UTB was successfully fabricated and showed the good RF properties with a cut-off frequency of 138 GHz.