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Formation of thin silicon films using low energy oxygen ion implantation

✍ Scribed by A.K. Robinson; C.D. Marsh; U. Bussmann; J.A. Kilner; Y. Li; J. Vanhellemont; K.J. Reeson; P.L.F. Hemment; G.R. Booker

Book ID
113282438
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
856 KB
Volume
55
Category
Article
ISSN
0168-583X

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πŸ“œ SIMILAR VOLUMES

Silicon nanocrystal formation in thin th
Silicon nanocrystal formation in thin thermal-oxide films by very-low energy Si+ ion implantation
✍ P. Normand; D. Tsoukalas; E. Kapetanakis; J.A. Van Den Berg; D.G. Armour; J. Sto πŸ“‚ Article πŸ“… 1997 πŸ› Elsevier Science 🌐 English βš– 271 KB

Thin thermally grown silicon oxides are implanted with a high dose of silicon using very low energy ion implantation. After high temperature annealing, the oxides are observed by Transmission Electron Microscopy which reveals the existence of silicon nano-crystals. The electrical properties of metal