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Formation of thin Si3N4 films by nitrogen ion implantation into silicon

โœ Scribed by A.D. Yadav; M.C. Joshi

Book ID
107862677
Publisher
Elsevier Science
Year
1979
Tongue
English
Weight
228 KB
Volume
59
Category
Article
ISSN
0040-6090

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Silicon nanocrystal formation in thin th
Silicon nanocrystal formation in thin thermal-oxide films by very-low energy Si+ ion implantation
โœ P. Normand; D. Tsoukalas; E. Kapetanakis; J.A. Van Den Berg; D.G. Armour; J. Sto ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 271 KB

Thin thermally grown silicon oxides are implanted with a high dose of silicon using very low energy ion implantation. After high temperature annealing, the oxides are observed by Transmission Electron Microscopy which reveals the existence of silicon nano-crystals. The electrical properties of metal