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Formation of Si3N4 by nitrogen implantation into SiC

โœ Scribed by S. Miyagawa; K. Baba; M. Ikeyama; K. Saitoh; S. Nakao; Y. Miyagawa


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
572 KB
Volume
83
Category
Article
ISSN
0257-8972

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Photoluminescence induced by Si implanta
โœ F.L. Bregolin; M. Behar; U.S. Sias; E.C. Moreira ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 250 KB

Up to the present, photoluminescence (PL) was obtained from near stoichiometric or amorphous Si nitride films (SiN x ) after annealing at high temperatures. As a consequence, the existence of PL bands has been reported in the 400-900 nm range. In the present contribution, we report the first PL resu