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Direct formation of dielectric thin films on silicon by low energy ion beam bombardment

โœ Scribed by SS Todorov; CF Yu; ER Fossum

Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
368 KB
Volume
36
Category
Article
ISSN
0042-207X

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Secondary Ions Produced by Low-energy Im
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โœ T. Sato; A. Shimizu; K. Nakamura; K. Hiraoka ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 187 KB ๐Ÿ‘ 1 views

Secondary ions produced by low-energy He + and Ne + ion impact on van der Waals solid thin films deposited on a silicon substrate were measured as a function of film thickness using a reflectron-type time-of-flight mass spectrometer. The intensities of secondary ions N + and N 3 + produced by 400 eV