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Amorphous iron formation due to low energy heavy ion implantation in evaporated57Fe thin films

✍ Scribed by E. Kuzmann; S. Stichleutner; Z. Homonnay; A. Vértes; A. Paszternák; F. Nagy; I. Felhősi; G. Pető; J. Telegdi; E. Kálmán


Book ID
106440489
Publisher
Springer
Year
2008
Tongue
English
Weight
558 KB
Volume
277
Category
Article
ISSN
1588-2780

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Thin thermally grown silicon oxides are implanted with a high dose of silicon using very low energy ion implantation. After high temperature annealing, the oxides are observed by Transmission Electron Microscopy which reveals the existence of silicon nano-crystals. The electrical properties of metal