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Formation of the thermal donors in the hydrogen-implanted nitrogen-doped silicon crystal

✍ Scribed by I.V. Antonova; D. Yang; V.P. Popov; V.I. Obodnikov; A. Misiuk


Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
118 KB
Volume
66
Category
Article
ISSN
0167-9317

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Donor formation in silicon owing to ion
✍ F.P. Widdershoven; J.P.M. Naus πŸ“‚ Article πŸ“… 1989 πŸ› Elsevier Science 🌐 English βš– 317 KB

Schottky diodes in n-and pope silicon, implanted with erbium and subsequently annealed at 900 Β°C were characterized with capacitance-voltage (CV) and deep level transient spectroscopy (DL TS) techniques. The implanted samples showed an excess donor concentration with a depth profile similar to an er