๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

The structure of rapidly thermally annealed nitrogen-implanted silicon

โœ Scribed by Z. Liliental; R.W. Carpenter; J.C. Kelly

Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
983 KB
Volume
138
Category
Article
ISSN
0040-6090

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Laser and thermal annealing of Te-implan
Laser and thermal annealing of Te-implanted silicon
โœ J. De Bruyn; G. Langouche; M. van Rossum; M. de Potter; R. Coussement ๐Ÿ“‚ Article ๐Ÿ“… 1979 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 244 KB
Laser annealing of nitrogen and oxigen i
Laser annealing of nitrogen and oxigen ion implanted silicon layers
โœ G. Della Mea; P. Mazzoldi; G. Foti; E. Rimini ๐Ÿ“‚ Article ๐Ÿ“… 1979 ๐Ÿ› Elsevier Science โš– 192 KB

Q-switched ruby laser is used to anneal nitrogen and oxygen heavily implanted < 100 > silicon wafers. The atomic concentration of nitrogen and oxygen in the implanted layer is about 4%, which is a value higher than the solid solubility of these elements in silicon. The thermal epitaxial regrowth of