A high density of double stacking faults consisting of six Si-C bilayers in cubic stacking sequence could be observed in 4H-SiC crystals with nitrogen doping concentrations exceeding 2 Â 10 19 cm À3 after annealing at temperatures above 1100 1C. The double stacking faults form by glide of two partia
✦ LIBER ✦
Formation of stacking faults in nitrogen-doped silicon single crystals
✍ Scribed by W.v Ammon; R Hölzl; T Wetzel; D Zemke; G Raming; M Blietz
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 503 KB
- Volume
- 66
- Category
- Article
- ISSN
- 0167-9317
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