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Formation of stacking faults and dislocations in phosphorus diffused silicon

โœ Scribed by W.F. Tseng; S.S. Lau; J.W. Mayer


Publisher
Elsevier Science
Year
1978
Tongue
English
Weight
457 KB
Volume
68
Category
Article
ISSN
0375-9601

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A high density of double stacking faults consisting of six Si-C bilayers in cubic stacking sequence could be observed in 4H-SiC crystals with nitrogen doping concentrations exceeding 2 ร‚ 10 19 cm ร€3 after annealing at temperatures above 1100 1C. The double stacking faults form by glide of two partia