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The electrical behaviour of individual dislocations, shockley partials and stacking fault ribbons in silicon

✍ Scribed by A. Ourmazd; P.R. Wilshaw; G.R. Booker


Publisher
Elsevier Science
Year
1983
Weight
677 KB
Volume
116
Category
Article
ISSN
0378-4363

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A theoretical interpretation of the elec
✍ Dr. A. Ourmazd πŸ“‚ Article πŸ“… 1981 πŸ› John Wiley and Sons 🌐 English βš– 493 KB

## Abstract The EBIC data obtained from individual edge and Frank partial dislocations ^i^n Si, and described in other publications, are related to defect parameters, such as the capture cross‐section for minority carriers, which determine electrical recombination properties of dislocations. A two