✦ LIBER ✦
A theoretical interpretation of the electrical behaviour of individual edge dislocations in Si as determined by combined EBIC/TEM studies
✍ Scribed by Dr. A. Ourmazd
- Publisher
- John Wiley and Sons
- Year
- 1981
- Tongue
- English
- Weight
- 493 KB
- Volume
- 16
- Category
- Article
- ISSN
- 0232-1300
No coin nor oath required. For personal study only.
✦ Synopsis
Abstract
The EBIC data obtained from individual edge and Frank partial dislocations ^i^n Si, and described in other publications, are related to defect parameters, such as the capture cross‐section for minority carriers, which determine electrical recombination properties of dislocations. A two stage model for the capture of minority carriers by dislocations is developed and shown to correctly account for the temperature‐dependence of the EBIC contrast obtained from these dislocations.