✦ LIBER ✦
Influence of dissociation of individual dislocations in silicon into Shockley partials on their carrier recombination efficiency: A. Ourmazd, G.R. Booker Department of Metallurgy and Science of Materials, University of Oxford, Oxford, England
- Publisher
- Elsevier Science
- Year
- 1978
- Tongue
- English
- Weight
- 86 KB
- Volume
- 21
- Category
- Article
- ISSN
- 0038-1101
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