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Formation of ternary Ni-silicide on relaxed and strained SiGe layers

✍ Scribed by Q.T. Zhao; D. Buca; St. Lenk; R. Loo; M. Caymax; S. Mantl

Book ID: 108207360
Publisher: Elsevier Science
Year: 2004
Tongue: English
Weight: 327 KB
Volume: 76
Category: Article
ISSN: 0167-9317
DOI: 10.1016/j.mee.2004.07.030

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