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HfO 2 gate dielectrics on strained-Si and strained-SiGe layers

✍ Scribed by Johansson, M; Yousif, M Y A; Lundgren, P; Bengtsson, S; Sundqvist, J; H rsta, A; Radamson, H H

Book ID
125538911
Publisher
Institute of Physics
Year
2003
Tongue
English
Weight
205 KB
Volume
18
Category
Article
ISSN
0268-1242

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Although the high mobility channel was formed with the strained Si layer on the fully relaxed Si 0.8 Ge 0.2 buffer layer, the mobility was severely attenuated with increasing the gate bias due to the degraded interface. The quality of oxide grown on strained Si was found to be worse than that for th