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Local equilibrium and global relaxation of strained SiGe∕Si(001) layers

✍ Scribed by Stoffel, M.; Rastelli, A.; Tersoff, J.; Merdzhanova, T.; Schmidt, O.


Book ID
111886828
Publisher
The American Physical Society
Year
2006
Tongue
English
Weight
677 KB
Volume
74
Category
Article
ISSN
1098-0121

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📜 SIMILAR VOLUMES


Strained SiGe islands on Si(001): Evolut
✍ Rastelli, A. ;Stoffel, M. ;Denker, U. ;Merdzhanova, T. ;Schmidt, O. G. 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 345 KB

## Abstract We report on the morphological evolution of strained SiGe islands epitaxially grown on Si(001). After reviewing the morphological transitions undergone by the islands as their size changes, we present recent results obtained by an approach consisting of “reading the footprints” left by