Ytterbium silicide (YbSi 1.7 ) thin films were prepared on single-crystal Si (111) wafers and fused silica plates by solid-phase crystallization. The structure and phase transformations of the films were analysed by X-ray diffraction and Rutherford backscattering spectroscopy (RBS). The electrical p
โฆ LIBER โฆ
Formation of silicide thin films by solid state reaction
โ Scribed by P. Gas; F.M. d'Heurle
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 873 KB
- Volume
- 73
- Category
- Article
- ISSN
- 0169-4332
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