It is observed froni the studies of electrical resistivity of films of SnSe of different thicknesses and substrate temperatures that resistivity decreases with increase in thickness and substrate temperature. The study of variation in band gap with thickness shows a linear relationship between band
Electrooptic Properties of SnSe Thin Films Synthesized by Solid State Reaction
โ Scribed by S. S. Siddiqui; Dr. C. F. Desai
- Publisher
- John Wiley and Sons
- Year
- 1993
- Tongue
- English
- Weight
- 205 KB
- Volume
- 28
- Category
- Article
- ISSN
- 0232-1300
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โฆ Synopsis
Tin monoselinide thin films were obtained by solid state reaction in vacuum. They were characterised by X-ray diffraction and subjected to resistivity and optical absorbance measurements. The data were analysed for obtaining activation energy and band gap. The effects of varying deposition parameters were studied. These films are concluded to be superior to those obtained directly from the compound semiconductor.
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