Tin monoselinide thin films were obtained by solid state reaction in vacuum. They were characterised by X-ray diffraction and subjected to resistivity and optical absorbance measurements. The data were analysed for obtaining activation energy and band gap. The effects of varying deposition parameter
Electrooptic properties of polycrystalline SnSe thin films
โ Scribed by Prof. V. P. Bhatt; K. Gireesan; C. F. Desai
- Publisher
- John Wiley and Sons
- Year
- 1989
- Tongue
- English
- Weight
- 370 KB
- Volume
- 24
- Category
- Article
- ISSN
- 0232-1300
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โฆ Synopsis
It is observed froni the studies of electrical resistivity of films of SnSe of different thicknesses and substrate temperatures that resistivity decreases with increase in thickness and substrate temperature. The study of variation in band gap with thickness shows a linear relationship between band gap and l/t2. Finally, band gapsubstrate temperature studies show that the band gap increases with substrate temperature.
๐ SIMILAR VOLUMES
Polycrystalline thin films of tin selenide have been prepared by vacuum deposition at a substrate temperature of 150 o C and reported. X-ray diffraction, optical transmission, electrical conductivity and photoconductivity studies have been carried out on these films. Annealing the films at 300 o C f