Electrical and Photoelectrical Properties of Vacuum Deposited SnSe Thin Films

✍ Scribed by D. Pathinettam Padiyan; A. Marikani; K.R. Murali

• Publisher: John Wiley and Sons
• Year: 2000
• Tongue: English
• Weight: 99 KB
• Volume: 35
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/1521-4079(200008)35:8<949::aid-crat949>3.0.co;2-r

✦ Synopsis

Polycrystalline thin films of tin selenide have been prepared by vacuum deposition at a substrate temperature of 150 o C and reported. X-ray diffraction, optical transmission, electrical conductivity and photoconductivity studies have been carried out on these films. Annealing the films at 300 o C for 2 hours improves the crystallinity and a preferred orientation along the (111) plane develops. The optical transmission measurement reveals that the SnSe thin films have a direct allowed band gap of 1.26 eV. Electrical conductivity study shows that the conductivity increases with increasing temperature. The observed electrical conductivity at low temperature is explained based on hopping conduction mechanism. The photoconductivity measurement indicates the presence of continuously distributed deep localised gap states in this material.