Polycrystalline thin films of tin selenide have been prepared by vacuum deposition at a substrate temperature of 150 o C and reported. X-ray diffraction, optical transmission, electrical conductivity and photoconductivity studies have been carried out on these films. Annealing the films at 300 o C f
Structure of vacuum-deposited Tl2Pc film and its optical and electrical properties
β Scribed by Takeo Suga; Seiji Isoda; Takashi Kobayashi
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 151 KB
- Volume
- 03
- Category
- Article
- ISSN
- 1088-4246
No coin nor oath required. For personal study only.
β¦ Synopsis
Dithallium phthalocyanine (Tl 2 Pc) was synthesized by direct reaction of Tl metal with 1,2dicyanobenzene. A thin film of the product was prepared by vacuum deposition on KCl single-crystalline substrate and its structure and epitaxy were examined by electron microscopy. The crystal structure of the thin film was the same as the orthorhombic structure reported previously. The film grew epitaxially on KCl substrate as expected from point-on-line coincidence. The UV-vis spectrum of the film was measured and compared with that of an as-synthesized powder sample. The UV-vis spectrum of the thin film of Tl 2 Pc showed some differences from that of the powder in the visible region, which may result from the difference in molecular orientation. The electrical resistance of a Tl 2 Pc thin film deposited on mica was about 10 10 in our measuring set-up, which means that the film does not show high conductivity.
π SIMILAR VOLUMES
A parameter set was found which allows depositing ZnSe thin films with good properties to be used as buffer layer in solar cells with ZnO/ZnSe/CIGS structure. In this way, the ZnSe compound could be used in substitution of the CdS which is a toxic material generally used as buffer layer in Cu(In,Ga)