Formation of oxygen related donors in step-annealed CZ-silicon
β Scribed by Vikash Dubey; Shyam Singh
- Book ID
- 110644104
- Publisher
- Springer-Verlag
- Year
- 2002
- Tongue
- English
- Weight
- 74 KB
- Volume
- 25
- Category
- Article
- ISSN
- 0250-4707
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π SIMILAR VOLUMES
The annihilation kinetics of new oxygen donors (NDs) has been studied. The ND and interstitial oxygen concentration as well as the energy distribution of ND states are determined subsequent to annealing steps with various duration (2 s to 250 h) and at temperatures ranging from 875 to 1025 C. The an
## Abstract The characteristic features of production processes of thermal donors in Czochralski grown silicon heat treated at __T__=450Β°C under hydrostatic pressures of about 1 GPa are studied. Two families of oxygenβrelated donors are formed under compressive stress. The first one is the wellβkno