We report the fabncation of metal-semiconductor-metal (MSM) photo detectors on silicon substrates with CoSi2 electrodes. The electrode patterns have been formed by ion beam synthesis applying maskless implantation with a cobalt focused ion beam. Implantation has been carried out with the substrate a
Formation of local ferromagnetic areas on GaAs by focused Mn ion beam implantation
β Scribed by M. Kasai; J. Yanagisawa; H. Tanaka; S. Hasegawa; H. Asahi; K. Gamo; Y. Akasaka
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 420 KB
- Volume
- 242
- Category
- Article
- ISSN
- 0168-583X
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β¦ Synopsis
Magnetic and chemical properties of Mn-implanted surfaces of a GaAs substrate were investigated using a magnetic force microscope (MFM) and X-ray photoemission spectroscopy (XPS). The Mn implanted region was changed to a grain structure after annealing at 840 Β°C for 10 s, and ferromagnetic characteristics were observed in each grain. From the XPS spectra, it was found that implanted Mn was chemically bonded with other elements, indicating the formation of ferromagnetic materials such as GaMn and MnAs.
π SIMILAR VOLUMES
We report evidence of single electron tunneling at \(77 \mathrm{~K}\) in \(\mathrm{GaAs} / \mathrm{AlGaAs}\) heterostructures implanted with a single line scan of a focused ion beam (FIB). We observe clear staircases in the current-voltage characteristics when the current is measured across the impl