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Resonant tunneling through one-dimensional states constricted by AlxGa1−xAs/GaAs/AlxGa1−xAs heterojunctions and high-resistance regions induced by focused Ga ion beam implantation

✍ Scribed by Seigo Tarucha; Yoshiro Hirayama; Yasuhiro Tokura


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
440 KB
Volume
9
Category
Article
ISSN
0749-6036

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