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Formation of Ge islands from a Ge layer on Si substrate during post-growth annealing

✍ Scribed by I. Kovačević; B. Pivac; P. Dubček; H. Zorc; N. Radić; S. Bernstorff; M. Campione; A. Sassella

Book ID
108060049
Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
906 KB
Volume
253
Category
Article
ISSN
0169-4332

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Growth and photoluminescence of self-ass
Growth and photoluminescence of self-assembled islands obtained during the deposition of Ge on a strained SiGe layer
✍ D.N. Lobanov; A.V. Novikov; N.V. Vostokov; Y.N. Drozdov; A.N. Yablonskiy; Z.F. K 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 367 KB

The growth and photoluminescence of Ge(Si) self-assembled islands on strained Si 1Àx Ge x layers (0 < x < 20%) has been investigated. Both island size and density increase when the Ge content in the predeposited Si 1Àx Ge x alloy increases. The increased island density is associated with an enhanced