𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Formation of buried insulating island-like SiO2 layer in silicon

✍ Scribed by A.V. Frantskevich; A.K. Fedotov; N.V. Frantskevich; A.V. Mazanik; E.I. Rau; V.S. Kulinkayskas


Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
309 KB
Volume
124-125
Category
Article
ISSN
0921-5107

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Stacking fault reduction in Silicon-on-I
✍ Gerold W. Neudeck; Keith D. Merritt; Jack P. Denton πŸ“‚ Article πŸ“… 1997 πŸ› Elsevier Science 🌐 English βš– 420 KB

A method to fabricate silicon-on-insulator (SOI) device sized islands, using Epitaxiai Lateral Overgrowth (ELO) from the Selective Epitaxial Growth (SEG) of Silicon, has =96.3% stacking fault-free SO1 islands when SiO2 was used as the field insulator. When a nitrided thermal SiO 2 was used =99% of t