✦ LIBER ✦
Stacking fault reduction in Silicon-on-Insulator (SOI) islands produced by Selective Epitaxial Growth (SEG) of Silicon using a thermally nitrided SiO2 field insulator
✍ Scribed by Gerold W. Neudeck; Keith D. Merritt; Jack P. Denton
- Publisher
- Elsevier Science
- Year
- 1997
- Tongue
- English
- Weight
- 420 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0167-9317
No coin nor oath required. For personal study only.
✦ Synopsis
A method to fabricate silicon-on-insulator (SOI) device sized islands, using Epitaxiai Lateral Overgrowth (ELO) from the Selective Epitaxial Growth (SEG) of Silicon, has =96.3% stacking fault-free SO1 islands when SiO2 was used as the field insulator. When a nitrided thermal SiO 2 was used =99% of the small islands were defect-free. Islands with rounded comers and nitrided oxide had stacking fault defects of less than 500/cm 2.