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Formation and structure of inverted hexagonal pyramid defects in multiple quantum wells InGaN/GaN

✍ Scribed by Watanabe, K.; Yang, J. R.; Huang, S. Y.; Inoke, K.; Hsu, J. T.; Tu, R. C.; Yamazaki, T.; Nakanishi, N.; Shiojiri, M.

Book ID: 125422267
Publisher: American Institute of Physics
Year: 2003
Tongue: English
Weight: 440 KB
Volume: 82
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1542683

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