An InGaN/GaN multiple quantum well structure grown by low pressure MOCVD on c-Al 2 O 3 substrate is investigated using spectral-time-resolved cathodoluminescence microscopy (CL). At 6 K the laterally integrated CL spectrum shows a very efficient blue emission from the InGaN multiple quantum well cen
β¦ LIBER β¦
Study of the strain relaxation in InGaN/GaN multiple quantum well structures
β Scribed by Bai, J.; Wang, T.; Sakai, S.
- Book ID
- 127305614
- Publisher
- American Institute of Physics
- Year
- 2001
- Tongue
- English
- Weight
- 289 KB
- Volume
- 90
- Category
- Article
- ISSN
- 0021-8979
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