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Properties of trench defects in InGaN/GaN quantum well structures

✍ Scribed by Sahonta, S.-L.; Kappers, M. J.; Zhu, D.; Puchtler, T. J.; Zhu, T.; Bennett, S. E.; Humphreys, C. J.; Oliver, R. A.

Book ID: 118766389
Publisher: John Wiley and Sons
Year: 2012
Tongue: English
Weight: 634 KB
Volume: 210
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.201200408

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