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Formation and role of defects in stacked large binary InAs/GaAs quantum dot structures

โœ Scribed by Ng, J T; Bangert, U; Missous, M


Book ID
119994033
Publisher
Institute of Physics
Year
2006
Tongue
English
Weight
967 KB
Volume
22
Category
Article
ISSN
0268-1242

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The optical transitions of the wetting layers in two-fold self-assembled InAs=GaAs quantum dot samples are studied as a function of GaAs spacer thickness by various methods. The absorption related studies by photore ectance and selective photoluminescence excitation spectroscopy reveal already for t