Photoluminescence, capacitance-voltage and transmission electron microscopy studies have been carried out on structures containing a sheet of a self-assembled InAs quantum dots formed in GaAs matrices after the deposition of a 1.7 ML of InAs at 480 β’ C. The use of n-and p-type GaAs matrices allows u
β¦ LIBER β¦
Modeling of minibands and electronic transport in one-dimensional stacks of InAs/GaAs quantum dots
β Scribed by V.M. Fomin; P. Kratzer
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 508 KB
- Volume
- 42
- Category
- Article
- ISSN
- 1386-9477
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