Transport properties of two-dimensional electron gases in Ga[Al]As heterostructures containing InAs self-assembled quantum dots

✍ Scribed by E Ribeiro; R Jäggi; T Heinzel; K Ensslin; T.G Medeiros-Ribeiro; P.M Petroff

• Publisher: Elsevier Science
• Year: 1999
• Tongue: English
• Weight: 295 KB
• Volume: 47
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(99)00152-5

✦ Synopsis

We have performed transport experiments on two-dimensional electron gases in a GaAs-Alo.sGa,-/As heterostructure containing InAs self-assembled quantum dots in close proximity to the heterointerface. We find that the dots act as repulsive scatterers and dominate the mobility. In the samples with the highest dot density, we find a metal-insulator transition, which differs from such transitions in other samples in several respects.