Formation of dislocation defects in the process of burying of InAs quantum dots into GaAs

✍ Scribed by N. A. Bert; A. L. Kolesnikova; V. N. Nevedomsky; V. V. Preobrazhenskii; M. A. Putyato; A. E. Romanov; V. M. Seleznev; B. R. Semyagin; V. V. Chaldyshev

• Book ID: 111444466
• Publisher: Springer
• Year: 2009
• Tongue: English
• Weight: 649 KB
• Volume: 43
• Category: Article
• ISSN: 1063-7826
• DOI: 10.1134/s1063782609100236